Effect of surface pretreatment on interfacial chemical bonding states of atomic layer deposited ZrO2 on AlGaN

Effect of surface pretreatment on interfacial chemical bonding states of atomic layer deposited ZrO2 on AlGaN

Atomic layer deposition (ALD) of ZrO2 on native oxide covered (untreated) and buffered oxide etchant (BOE) treated AlGaN surface was analyzed by utilizing x-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy. Evidenced by Ga–O and Al–O chemical bonds by XPS, pa...

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書目詳細資料
Main Authors:	Ye, Gang, Wang, Hong, Ng, Serene Lay Geok, Ji, Rong, Arulkumaran, Subramaniam, Ng, Geok Ing, Li, Yang, Liu, Zhi Hong, Ang, Kian Siong
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2015
在線閱讀:	https://hdl.handle.net/10356/81082 http://hdl.handle.net/10220/39102
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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