Determination of diffusion lengths with the use of EBIC from a diffused junction with any values of junction depths

Determination of diffusion lengths with the use of EBIC from a diffused junction with any values of junction depths

Minority carrier diffusion lengths determine the performance of bipolar and photodiode devices. An electron-beaminduced-current (EBIC) method has been widely used to extract this parameter. The extraction of the diffusion lengths involves a p-n junction to collect the minority carriers. The most use...

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書目詳細資料
Main Authors:	Ong, Vincent K. S., Kurniawan, Oka.
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2009
主題:	DRNTU::Engineering::Electrical and electronic engineering
在線閱讀:	https://hdl.handle.net/10356/84920 http://hdl.handle.net/10220/4658
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University
語言:	English

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