Optical characteristics of 1.55 μm GaInNAs multi-quantum wells
We report the optical characterization of high-quality 1.55 mum GaxIn1-xNyAs1-y multiquantum wells (MQWs), grown on GaAs with Ga(In)N0.01As spacer layers. The transitions between the quantized QW states of the electrons and holes have been identified using photoluminescence excitation spectroscopy....
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| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2009
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/90379 http://hdl.handle.net/10220/6060 http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:ELSEVIER_SCOPUS&id=doi:&genre=&isbn=&issn=&date=2004&volume=85&issue=18&spage=4013&epage=4015&aulast=Sun&aufirst=%20H%20D&auinit=&title=Applied%20Physics%20Letters&atitle=Optical%20characteristics%20of%201%2E55%20%CE%BCm%20GaInNAs%20multiple%20quantum%20wells&sici. |
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| Institution: | Nanyang Technological University |
| Language: | English |