Characterization of selective quantum well intermixing in 1.3 mu m GaInNAs/GaAs structures
Rapid thermal annealing combined with SiO2 caps deposited on the surface of samples by different techniques is used to selectively disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in situ to the stage of blueshift saturation. After thermal annealing under specific conditi...
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| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2009
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/91819 http://hdl.handle.net/10220/6063 http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EBSCO_APH&id=doi:&genre=&isbn=&issn=00218979&date=2003&volume=94&issue=3&spage=1550&epage=&aulast=Sun&aufirst=%20H%20%20D&auinit=&title=Journal%20of%20Applied%20Physics&atitle=Characterization%20of%20selective%20quantum%20well%20intermixing%20in%201%2E3%20%26mu%3Bm%20GaInNAs%2FGaAs%20structures%2E&sici. |
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| Institution: | Nanyang Technological University |
| Language: | English |