Structure of the breakdown spot during progressive breakdown of ultra-thin gate oxides

• Main Authors: Palumbo, F., Lombardo, S., Pey, K.L., Tang, L.J., Tung, C.H., Lin, W.H., Radhakrishnan, M.K., Falci, G.
• Other Authors: INSTITUTE OF MICROELECTRONICS
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/112982
• Institution: National University of Singapore

Annual Proceedings - Reliability Physics (Symposium)