Structure of the breakdown spot during progressive breakdown of ultra-thin gate oxides
Annual Proceedings - Reliability Physics (Symposium)
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Main Authors: | Palumbo, F., Lombardo, S., Pey, K.L., Tang, L.J., Tung, C.H., Lin, W.H., Radhakrishnan, M.K., Falci, G. |
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Other Authors: | INSTITUTE OF MICROELECTRONICS |
Format: | Conference or Workshop Item |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/112982 |
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Institution: | National University of Singapore |
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