Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors

Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors

10.1063/1.1616195

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Bibliographic Details
Main Authors: Pey, K.L., Tung, C.H., Tang, L.J., Lin, W.H., Radhakrishnan, M.K.
Other Authors: INSTITUTE OF MICROELECTRONICS
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/115288
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Institution: National University of Singapore
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Summary:10.1063/1.1616195

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