Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors

10.1063/1.1616195

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Bibliographic Details
Main Authors:	Pey, K.L., Tung, C.H., Tang, L.J., Lin, W.H., Radhakrishnan, M.K.
Other Authors:	INSTITUTE OF MICROELECTRONICS
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/115288
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-1152882023-10-26T21:16:04Z Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors Pey, K.L. Tung, C.H. Tang, L.J. Lin, W.H. Radhakrishnan, M.K. INSTITUTE OF MICROELECTRONICS 10.1063/1.1616195 Applied Physics Letters 83 14 2940-2942 APPLA 2014-12-12T07:13:35Z 2014-12-12T07:13:35Z 2003-10-06 Article Pey, K.L., Tung, C.H., Tang, L.J., Lin, W.H., Radhakrishnan, M.K. (2003-10-06). Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors. Applied Physics Letters 83 (14) : 2940-2942. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1616195 00036951 http://scholarbank.nus.edu.sg/handle/10635/115288 000185664000070 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.1616195
author2	INSTITUTE OF MICROELECTRONICS
author_facet	INSTITUTE OF MICROELECTRONICS Pey, K.L. Tung, C.H. Tang, L.J. Lin, W.H. Radhakrishnan, M.K.
format	Article
author	Pey, K.L. Tung, C.H. Tang, L.J. Lin, W.H. Radhakrishnan, M.K.
spellingShingle	Pey, K.L. Tung, C.H. Tang, L.J. Lin, W.H. Radhakrishnan, M.K. Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors
author_sort	Pey, K.L.
title	Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors
title_short	Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors
title_full	Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors
title_fullStr	Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors
title_full_unstemmed	Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors
title_sort	size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/115288
_version_	1781789375862931456

Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors

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