Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors
10.1063/1.1616195
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Main Authors: | Pey, K.L., Tung, C.H., Tang, L.J., Lin, W.H., Radhakrishnan, M.K. |
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Other Authors: | INSTITUTE OF MICROELECTRONICS |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/115288 |
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Institution: | National University of Singapore |
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