Determination of nitrogen composition in GaNxAs1-x epilayer on GaAs
10.1016/j.jcrysgro.2004.04.074
Saved in:
Main Authors: | Fan, W.J., Yoon, S.F., Cheah, W.K., Loke, W.K., Ng, T.K., Wang, S.Z., Liu, R., Wee, A. |
---|---|
Other Authors: | INSTITUTE OF ENGINEERING SCIENCE |
Format: | Conference or Workshop Item |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/115402 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy
by: Cheah, W.K., et al.
Published: (2014) -
Co-doping carbon tetrabromide (CBr4) and antimony (Sb) on GaAs [1 0 0] in solid source molecular beam epitaxy
by: Cheah, W.K., et al.
Published: (2014) -
Surfactant and impurity properties of antimony on GaAs and GaAs 1-xNx on GaAs [100] by solid source molecular beam epitaxy
by: Cheah, W.K., et al.
Published: (2014) -
Interpretation of anomalous photoluminescence peak in GaAs 1-xNx grown by molecular beam epitaxy
by: Fan, W.J., et al.
Published: (2014) -
Characterization of AlInGaN quaternary epilayers grown by metal organic chemical vapor deposition
by: Liu, W., et al.
Published: (2014)