Quantum mechanical simulation of a metal-oxide-semiconductor system
Master's
Saved in:
Main Author: | ZHENG JIANXIN |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Theses and Dissertations |
Language: | English |
Published: |
2010
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/13550 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Language: | English |
Similar Items
-
Germanium nanowire metal-oxide-semiconductor field-effect transistor fabricated by complementary-metal-oxide-semiconductor-compatible process
by: Peng, J.W., et al.
Published: (2014) -
High mobility III-V compound semiconductors for advanced transistor applications
by: CHIN HOCK CHUN
Published: (2011) -
High performance Ga2O3 metal-oxide-semiconductor field-effect transistors on an AlN/Si substrate
by: Lei, D., et al.
Published: (2021) -
Theoretical analyses of oxide-bypassed superjunction power metal oxide semiconductor field effect transistor devices
by: Chen, Y., et al.
Published: (2014) -
Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation
by: Wang, L., et al.
Published: (2014)