Silicon surface passivation by aluminium oxide studied with electron energy loss spectroscopy
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
Saved in:
Main Authors: | Hoex, Bram, Bosman, Michel, Nandakumar, Naomi, Kessels, WMM |
---|---|
Other Authors: | MATERIALS SCIENCE AND ENGINEERING |
Format: | Article |
Language: | English |
Published: |
WILEY-V C H VERLAG GMBH
2019
|
Subjects: | |
Online Access: | https://scholarbank.nus.edu.sg/handle/10635/155058 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Language: | English |
Similar Items
-
Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts
by: Xin, Zheng, et al.
Published: (2019) -
Atomic layer deposited high-κ films and their role in metal-insulator-metal capacitors for Si RF/analog integrated circuit applications
by: Zhu, C., et al.
Published: (2014) -
High-Performance MIM Capacitor Using ALD High-κ HfO 2-Al2O3 Laminate Dielectrics
by: Ding, S.-J., et al.
Published: (2014) -
RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications
by: Ding, S.-J., et al.
Published: (2014) -
Fabrication of carbon nanomaterial from charcoal
by: Feraer, Jasper, et al.
Published: (2008)