NOISE CHARACTERIZATION OF POLYSILICON EMITTER BIPOLAR TRANSISTORS
Master's
Saved in:
Main Author: | SYED SHAHZAD SHAH |
---|---|
Other Authors: | ELECTRICAL ENGINEERING |
Format: | Theses and Dissertations |
Published: |
2020
|
Online Access: | https://scholarbank.nus.edu.sg/handle/10635/170150 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Strong low-frequency noise in polysilicon emitter bipolar transistors with interfacial oxide due to fluctuations in tunneling probabilities
by: Lau, Wai Shing, et al.
Published: (2014) -
Numerical study of the dependence of unity gain bandwidth fT on polysilicon emitter in bipolar transistors
by: Chor, E.F., et al.
Published: (2014) -
Analytical and numerical studies of the dependence of high frequency performance on the use of a polysilicon emitter in bipolar transistors
by: Chor, E.F., et al.
Published: (2014) -
Compound emitter heterojunction bipolar transistor
by: Chor, E.F., et al.
Published: (2014) -
Heterojunction bipolar transistor with an additional minority carrier reflection barrier in the emitter
by: Chor, E.F., et al.
Published: (2014)