Stress-Memorized HZO for High-Performance Ferroelectric Field-Effect Memtransistor

Stress-Memorized HZO for High-Performance Ferroelectric Field-Effect Memtransistor

10.1021/acsaelm.1c01321

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Bibliographic Details
Main Authors: Tsai Shih-Hao, Fang Zihang, WANG XINGHUA, UMESH CHAND, Chun-Kuei Chen, SONU DEVI, SIVAN MAHESWARI, JIEMING PAN, Evgeny Zamburg, THEAN VOON YEW, AARON
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Language:English
Published: 2022
Online Access:https://scholarbank.nus.edu.sg/handle/10635/224436
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Institution: National University of Singapore
Language: English

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