Analysis of high-power devices using proton beam induced charge microscopy

Analysis of high-power devices using proton beam induced charge microscopy

10.1016/S0026-2714(01)00159-7

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Bibliographic Details
Main Authors:	Zmeck, M., Phang, J., Bettiol, A., Osipowicz, T., Watt, F., Balk, L., Niedernostheide, F.-J., Schulze, H.-J., Falck, E., Barthelmess, R.
Other Authors:	PHYSICS
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/55082
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Institution:	National University of Singapore

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