Evaluation of gadolinium oxide as a blocking layer of charge-trap flash memory cell
10.1149/1.2945877
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Main Authors: | Pu, J., Kim, S.-J., Kim, Y.-S., Cho, B.J. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/55916 |
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Institution: | National University of Singapore |
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