Evaluation of gadolinium oxide as a blocking layer of charge-trap flash memory cell

10.1149/1.2945877

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Bibliographic Details
Main Authors: Pu, J., Kim, S.-J., Kim, Y.-S., Cho, B.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/55916
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Institution: National University of Singapore

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