Modelling the degradation in the subthreshold characteristics of submicrometre LDD PMOSFETs under hot-carrier stressing

10.1088/0268-1242/13/5/003

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Bibliographic Details
Main Authors: Qin, W.H., Chim, W.K., Chan, D.S.H., Lou, C.L.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/62433
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Institution: National University of Singapore

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