A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's

A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's

10.1109/16.853038

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書目詳細資料
Main Authors:	Guan, H., Li, M.-F., He, Y., Cho, B.J., Dong, Z.
其他作者:	ELECTRICAL ENGINEERING
格式:	Article
出版:	2014
主題:	Direct tunneling MOS devices Oxide breakdown
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/80283
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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