Low temperature metal-induced lateral crystallization of Si 1-xGex using silicide/germanide-forming-metals
10.1143/JJAP.49.04DH10
Saved in:
Main Authors: | Phung, T.H., Xie, R., Tripathy, S., Yu, M., Zhu, C. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82630 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Low temperature metal induced lateral crystallization of Ge using germanide forming metals
by: Phung, T.H., et al.
Published: (2014) -
Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealing
by: Setiawan, Y., et al.
Published: (2012) -
Electrical transport of bottom-up grown single-crystal Si 1-xGex nanowire
by: Yang, W.F., et al.
Published: (2014) -
Rapid thermal oxidation of Ge-rich Si1-xGex heterolayers
by: Bera, M.K., et al.
Published: (2014) -
Doping dependence of intersubband transitions in Si1-xGex Si multiple quantum wells
by: Karunasiri, G., et al.
Published: (2014)