Origin of charge trapping in germanium nanocrystal embedded SiO 2 system: Role of interfacial traps?
10.1063/1.1645639
Saved in:
Main Authors: | Kan, E.W.H., Choi, W.K., Chim, W.K., Fitzgerald, E.A., Antoniadis, D.A. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82851 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Scanning capacitance microscopy detection of charge trapping in free-standing germanium nanodots and the passivation of hole trap sites
by: Wong, K.M., et al.
Published: (2014) -
Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal-insulator-semiconductor structure
by: Choi, W.K., et al.
Published: (2014) -
Confinement of nanocrystals and possible charge storage mechanism for MIS memory devices with ge nanocrystals embedded in SiO 2
by: Ho, V., et al.
Published: (2014) -
Confinement of nanocrystals and possible charge storage mechanism for MIS memory devices with ge nanocrystals embedded in SiO 2
by: Ho, V., et al.
Published: (2014) -
Confinement of nanocrystals and possible charge storage mechanism for MIS memory devices with ge nanocrystals embedded in SiO 2
by: Ho, V., et al.
Published: (2014)