Selective wet etching process for Ni-InGaAs contact formation in InGaAs N-MOSFETs with self-aligned source and drain
10.1149/2.020201jes
Saved in:
Main Authors: | Subramanian, S., Ivana, Zhou, Q., Zhang, X., Balakrishnan, M., Yeo, Y.-C. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/83001 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
A self-aligned Ni-InGaAs contact technology for InGaAs channel n-MOSFETs
by: Zhang, X., et al.
Published: (2014) -
Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in InGaAs metal-oxide-semiconductor field-effect transistors
by: Kong, E.Y.-J., et al.
Published: (2014) -
In0.7Ga0.3 as channel n-MOSFET with self-aligned Ni-InGaAs source and drain
by: Zhang, X., et al.
Published: (2014) -
Pd-InGaAs as a new self-aligned contact material on InGaAs
by: Kong, E.Y.-J., et al.
Published: (2014) -
Source / Drain Engineering in InGaAs n-MOSFETs for Logic Device Applications
by: SUJITH SUBRAMANIAN
Published: (2014)