A new fabrication method of low stress PECVD SiNx layers for biomedical applications
10.1016/j.tsf.2007.07.051
Saved in:
Main Authors: | Wei, J., Ong, P.L., Tay, F.E.H., Iliescu, C. |
---|---|
Other Authors: | MECHANICAL ENGINEERING |
Format: | Article |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/84797 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Low stress silicon nitride layers for MEMS applications
by: Iliescu, C., et al.
Published: (2014) -
Process analysis and optimization on PECVD amorphous silicon on glass substrate
by: Ong, Y.Y., et al.
Published: (2014) -
Extremely low surface recombination velocities on heavily doped planar and textured p+ silicon using low-temperature positively-charged PECVD SiOx/SiNx dielectric stacks with optimised antireflective properties
by: Duttagupta, S., et al.
Published: (2014) -
A new fabrication method for low stress PECVD - SiNx layers
by: Ong, P.L., et al.
Published: (2014) -
Excellent boron emitter passivation for high-efficiency Si wafer solar cells using AlOx/SiNx dielectric stacks deposited in an industrial inline plasma reactor
by: Duttagupta, S., et al.
Published: (2014)