Modified Rayleigh criterion for 90 nm lithography technologies and below

Modified Rayleigh criterion for 90 nm lithography technologies and below

10.1016/j.mee.2003.10.003

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書目詳細資料
Main Authors:	Chua, G.S., Tay, C.J., Quan, C., Lin, Q.
其他作者:	MECHANICAL ENGINEERING
格式:	Article
出版:	2014
主題:	Depth of focus Diffraction orders Dipole illumination Forbidden pitch Fraunhofer diffraction Low k1 imaging Off-axis illumination Rayleigh's equations
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/85430
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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