RBS and ERDA determinations of depth distributions of high-dose carbon ions implanted in silicon for silicon-carbide synthesis study

RBS and ERDA determinations of depth distributions of high-dose carbon ions implanted in silicon for silicon-carbide synthesis study

For ion beam synthesis of silicon carbide (SiC), a knowledge of the depth distribution of implanted carbon ions in silicon is crucial for successful development. Based on its simplicity and availability, we selected Rutherford backscattering spectrometry (RBS) as an analysis technique for this purpo...

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書目詳細資料
Main Authors:	S. Intarasiri, T. Kamwanna, A. Hallén, L. D. Yu, M. S. Janson, C. Thongleum, G. Possnert, S. Singkarat
格式:	雜誌
出版:	2018
主題:	Physics and Astronomy
在線閱讀:	https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33745966076&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/61940
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