A method of limiting the processing delay of the improved multi-stage variable group hybrid interference cancellation scheme for CDMA systems

by Ang, K.W., Krzymień, W.A.
Published 2016

Thermal effects on the Raman phonon of few-layer phosphorene

by Ling, Z.-P, Ang, K.-W
Published 2020

2D photonic memristor beyond graphene: Progress and prospects

by Feng, X., Liu, X., Ang, K.-W.
Published 2021

Strain-transfer structure beneath the transistor channel for increasing the strain effects of lattice-mismatched source and drain stressors

by Yeo, Y.-C., Ang, K.-W., Lin, J., Lam, C.-S.
Published 2014

Design and performance analysis of an adaptive receiver for multicarrier DS-CDMA

by Wang, H, Yen, K, Ang, K.W, Chew, Y.H
Published 2020

Interface engineering for the enhancement of carrier transport in black phosphorus transistor with ultra-thin high-? gate dielectric

by Ling, Z.-P, Zhu, J.-T, Liu, X, Ang, K.-W
Published 2020

Reactions of (F3CP)4 and (F3CP)5 with ruthenium and osmium carbonyl clusters: Characterisation and crystal structures of the products

by Ang, H.-G., Ang, K.-W., Ang, S.-G., Rheingold, A.L.
Published 2014

Enhanced performance in strained n-FET with double-recessed Si:C source/drain and lattice-mismatched SiGe strain-transfer structure (STS)

by Ang, K.-W., Wong, H.-S., Balasubramanian, N., Samudra, G., Yeo, Y.-C.
Published 2014

Contact resistance reduction technology using selenium egregation for N-MOSFETs with silicon-carbon source/drain

by Wong, H.-S., Ang, K.-W., Chan, L., Samudra, G., Yeo, Y.-C.
Published 2014

Hot-carrier effects in strained n-channel transistor with silicon-carbon (Si1-yCy) source/drain stressors and its orientation dependence

by Ang, K.-W., Wan, C., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Published 2014

Spatial distribution of interface trap density in strained channel transistors using the spread of the differential capacitance characteristics in scanning capacitance microscopy m...

by Wong, K.M., Chim, W.K., Ang, K.W., Yeo, Y.C.
Published 2014

Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure

by Ang, K.-W., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Published 2014

Novel nickel silicide contact technology using selenium segregation for SOI N-FETs with silicon-carbon source/drain stressors

by Wong, H.-S., Liu, F.-Y., Ang, K.-W., Samudra, G., Yeo, Y.-C.
Published 2014

Black Phosphorus Transistors with Near Band Edge Contact Schottky Barrier

by Ling, Z.-P, Sakar, S, Mathew, S, Zhu, J.-T, Gopinadhan, K, Venkatesan, T, Ang, K.-W
Published 2020

A Compact Model for 2-D Poly-MoS2 FETs With Resistive Switching in Postsynaptic Simulation

by Wang, L., Wang, L., Ang, K.-W., Thean, A.V.-Y., Liang, G.
Published 2020

Integrated process of photoresist trimming and dielectric hard mask etching for sub-50 nm gate patterning

by Bliznetsov, V., Kumar, R., Lin, H., Ang, K.-W., Yoo, W.J., Du, A.
Published 2014

Beneath-the-channel Strain-Transfer-Structure (STS) and embedded source/drain stressors for strain and performance enhancement of nanoscale MOSFETs

by Ang, K.-W., Lin, J., Tung, C.-H., Balasubramanian, N., Samudra, G., Yeo, Y.-C.
Published 2014

Strained n-MOSFET with embedded source/drain stressors and strain-transfer structure (STS) for enhanced transistor performance

by Ang, K.-W., Lin, J., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Published 2014

Enhanced carrier transport in strained bulk N-MOSFETs with silicon-carbon source/drain stressors

by Ang, K.-W., Chui, K.-J., Tung, C.-H., Samudra, G., Balasubramanian, N., Yeo, Y.-C.
Published 2014

Performance enhancement in uniaxial strained silicon-on-insulator N-MOSFETs featuring silicon-carbon source/drain regions

by Ang, K.-W., Chui, K.-J., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Published 2014