Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric

by Joo, M.S., Cho, B.J., Balasubramanian, N., Kwong, D.-L.
Published 2014

Thermal instability of effective work function in metal/high-κ stack and its material dependence

by Joo, M.S., Cho, B.J., Balasubramanian, N., Kwong, D.-L.
Published 2014

Effect of annealing on the composition and structure of HfO2 and nitrogen-incorporated HfO2

by Yeo, C.C., Joo, M.S., Cho, B.J., Whang, S.J.
Published 2014

Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs

by Mathew, S., Bera, L.K., Balasubramanian, N., Joo, M.S., Cho, B.J.
Published 2014

Effects of electron-beam lithography on thin gate oxide reliability

by Chong, P.F., Cho, B.J., Chor, E.F., Joo, M.S.
Published 2014

Interface configuration and Fermi-level pinning of fully silicided gate and high-K dielectric stack

by Joo, M.S., Park, C.S., Cho, B.J., Balasubramanian, N., Kwong, D.-L.
Published 2014

Comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation

by Cho, B.J., Kim, S.J., Ling, C.H., Joo, M.-S., Yeo, I.-S.
Published 2014

Investigation of reliability degradation of ultra-thin gate oxides irradiated under electron-beam lithography conditions

by Chong, P.F., Cho, B.J., Chor, E.F., Joo, M.S., Yeo, I.S.
Published 2014

Electron-beam irradiation-induced gate oxide degradation

by Cho, B.J., Chong, P.F., Chor, E.F., Joo, M.S., Yeo, I.S.
Published 2014

Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation

by Tan, Y.N., Chim, W.K., Choi, W.K., Joo, M.S., Cho, B.J.
Published 2014

Wet etching characteristics and surface morphology evaluation of MOCVD grown HfO2 film

by Balasubramanian, M., Bera, L.K., Mathew, S., Balasubramanian, N., Lim, V., Joo, M.S., Cho, B.J.
Published 2014

Reliability of thin gate oxides irradiated under X-ray lithography conditions

by Cho, B.J., Kim, S.J., Ang, C.H., Ling, C.H., Joo, M.S., Yeo, I.S.
Published 2014

High-K HfAlO charge trapping layer in SONOS-type nonvolatile memory device for high speed operation

by Tan, Y.N., Chim, W.K., Choi, W.K., Joo, M.S., Ng, T.H., Cho, B.J.
Published 2014

Analysis of Charge Trapping and Breakdown Mechanism in High-K Dielectrics with Metal Gate Electrode Using Carrier Separation

by Loh, W.Y., Cho, B.C., Joo, M.S., Li, M.F., Chan, D.S.H., Mathew, S., Kwong, D.-L.
Published 2014

Charge trapping and breakdown mechanism in HfAlO/TaN gate stack analyzed using carrier separation

by Loh, W.-Y., Cho, B.J., Joo, M.S., Li, M.-F., Chan, D.S.H., Mathew, S., Kwong, D.-L.
Published 2014

Improvement of Electrical Properties of MOCVD HfO2 by Multistep Deposition

by Yeo, C.C., Cho, B.J., Joo, M.S., Whoang, S.J., Kwong, D.L., Bera, L.K., Mathew, S., Balasubramanian, N.
Published 2014

Does short wavelength lithography process degrade the integrity of thin gate oxide?

by Kim, S.J., Cho, B.J., Chong, P.F., Chor, E.F., Ang, C.H., Ling, C.H., Joo, M.S., Yeo, I.S.
Published 2014

Dependence of chemical composition ratio on electrical properties of HfO2-Al2O3 gate dielectric

by Joo, M.S., Cho, B.J., Yeo, C.C., Wu, N., Yu, H., Zhu, C., Li, M.F., Kwong, D.-L., Balasubramanian, N.
Published 2014

Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process

by Joo, M.S., Cho, B.J., Yeo, C.C., Chan, D.S.H., Whoang, S.J., Mathew, S., Bera, L.K., Balasubramanian, N., Kwong, D.-L.
Published 2014

Energy gap and band alignment for (HfO2)x(Al 2O3)1-x on (100) Si

by Yu, H.Y., Li, M.F., Cho, B.J., Yeo, C.C., Joo, M.S., Kwong, D.-L., Pan, J.S., Ang, C.H., Zheng, J.Z., Ramanathan, S.
Published 2014