Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications

Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications

We present a performance enhancement evaluation of n þ doped graded InGaN drain/source regionbased HfO2/InAlN/AlN/GaN/AlN on SiC metal-oxide-semiconductor high electron mobility transistor (MOS-HEMTs) with a T-shaped gate. Impact on the device characteristics with the inclusion of a HfO2 surface pas...

Saved in:

書目詳細資料
Main Authors:	Murugapandiyan, P., Mohanbabu, A., Lakshmi, V. Rajya, Ramakrishnan, V.N., Varghese, Arathy, Wasim, MOHD, Baskaran, S., Kumar, R. Saravana, Janakiraman, V.
格式:	Article
語言:	English
出版:	H. : ĐHQGHN 2020
主題:	MOS-HEMT HfO2 JFoM Microwave applications Cut-off frequency Leakage current
在線閱讀:	http://repository.vnu.edu.vn/handle/VNU_123/89314 https://doi.org/10.1016/j.jsamd.2020.04.007
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

相似書籍

Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si
由: Liu, Siyu, et al.
出版: (2024)

AlN/GaN/AlGaN-on-Si HEMT achieving 1.3 W/mm at 5 v for 5G FR2 handsets
由: Li, Hanchao, et al.
出版: (2025)

Characterization of deep region trapping effects in AlN/GaN HEMTs with an AlGaN back barrier utilizing tri-state pulsed IV technique
由: Zhuang, Yihao, et al.
出版: (2024)

InAlN/GaN HEMTs on Si With High fT of 250 GHz
由: Xing, Weichuan, et al.
出版: (2020)

Temperature dependent characteristics of InAlN/GaN HEMTs for mm-wave applications
由: Xing, Weichuan, et al.
出版: (2018)

AlN-AlN layer bonding and it's thermal characteristics
由: Shuyu, Bao, et al.
出版: (2015)

AlN-AlN wafer bonding and its thermal characteristics
由: Bao, Shunyu, et al.
出版: (2015)

2DEG enhancement via epilayer stress engineering in AlN/GaN/AlN heterostructure
由: Patwal, Shashank
出版: (2021)

High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon
由: Vicknesh, S., et al.
出版: (2014)

Interfacial studies of AlN-cordierite composite
由: Lum, Jun Ming.
出版: (2010)

Ferromagnetic Cu-doped AlN nanorods
由: Ji, X.H., et al.
出版: (2014)

AlGaN/GaN HEMT-based ultraviolet photodetectors with enhanced device efficiency
由: Ahmed Salah Hawash Razeen
出版: (2024)

The structural and electronic properties of (AlN)x(C2)1-x and (AlN)x(BN)1-x alloys
由: Zheng, J.-C., et al.
出版: (2014)

Investigation of interface properties of h-BN and AlN on AlGaN/GaN heterostructures
由: Whiteside, Matthew David
出版: (2021)

Electronic structures of AlGaN2 nanotubes and AlN-GaN nanotube superlattice
由: Pan, H., et al.
出版: (2014)

Pulsed laser deposition of AlN thin films
由: Lu, Y.F., et al.
出版: (2014)

Investigation of self-heating effect on DC and RF performances in AlGaN/GaN HEMTs on CVD-Diamond
由: Ranjan, Kumud, et al.
出版: (2020)

A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs
由: Jia, Y., et al.
出版: (2021)

Pengaruh suhu, waktu Sputtering dan parameter pemotongan terhadap kekerasan dan umur pahat bubut HSS yang dilapisi AlN/TiN/AlN
由: , NURYANTO, Apri, et al.
出版: (2006)

AlN nanowires : synthesis, physical properties, and nanoelectronics applications
由: Kenry, et al.
出版: (2013)

Thermal conductivity of AlN-cordierite composite for microelectronic packaging
由: Chua, Jonathan Loy Pang.
出版: (2009)

Properties of porous AlN multilayered ceramic sandwich substrates
由: Tok, Alfred Iing Yoong, et al.
出版: (2014)

Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate
由: Whiteside, Matthew, et al.
出版: (2021)

Memory effect of Al-rich AlN films synthesized with rf magnetron sputtering
由: Zhao, P., et al.
出版: (2010)

Analytical modelling of high temperature characteristics on the DC responses for Schottky-gate AlGaN/GaN HEMT devices
由: Wang, Y.-H., et al.
出版: (2014)

Record low contact resistance for InAlN/GaN HEMTs on Si with non-gold metal
由: Arulkumaran, Subramaniam, et al.
出版: (2015)

Studies of gallium nitride (GaN) based high electron mobility transistor (HEMTS)
由: Ong, Eugene Wei Han
出版: (2024)

Fabrication and characterization of AIGaN/GaN HEMTs
由: HOY KIN MENG, DERRICK
出版: (2010)

Electronic calculation of Mn3AlN with anti-perovskite structure
由: Ouyang, Y., et al.
出版: (2014)

Ultraviolet photoluminescence from ferromagnetic Fe-doped AlN nanorods
由: Ji, X.H., et al.
出版: (2014)

Ferromagnetism in Mg-doped AlN from ab initio study
由: Wu, R.Q., et al.
出版: (2014)

Growth and visible photoluminescence of SiCxNy/AlN nanoparticle superlattices
由: Xu, M., et al.
出版: (2014)

Deposition, characterization, and device fabrication of GaN and AlN based thin film materials
由: Ashraf Uddin.
出版: (2008)

Electronic properties of zinc-blende GaN, AlN, and their alloys Ga1-xAlxN
由: Fan, W.J., et al.
出版: (2014)

Growth of crack-free GaN on AlN quantum dots on Si(111)substrates by MOCVD
由: Sun, W.H., et al.
出版: (2016)

A novel checker-patterned AlN MEMS resonator as gravimetric sensor
由: Lee, Man I., et al.
出版: (2013)

Enhancing the piezoelectric modulus of wurtzite AlN by ion beam strain engineering
由: Fiedler, Holger, et al.
出版: (2021)

Band structure parameters of zinc-blende GaN, AlN and their alloys Ga1-xAlxN
由: Fan, W.J., et al.
出版: (2014)

Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTs
由: Huang, H., et al.
出版: (2014)

Processing and Mechanical Properties of Pure Mg and in-situ AlN Reinforced Mg-5Al Composite
由: MAUNG AYE THEIN
出版: (2010)