Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown b...

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التفاصيل البيبلوغرافية
المؤلفون الرئيسيون:	Sadia, Cyril P., Laganapan, Aleena Maria, Tumanguil, Mae Agatha, Estacio, Elmer, Somintac, Armando, Salvador, Arnel A., Que, Christopher T., Yamamoto, Kohji, Tani, Masahiko
التنسيق:	text
منشور في:	Animo Repository 2012
الموضوعات:	Gallium arsenide Indium arsenide Molecular beam epitaxy Scanning electron microscopy Electric fields Physics
الوصول للمادة أونلاين:	https://animorepository.dlsu.edu.ph/faculty_research/3744 https://animorepository.dlsu.edu.ph/context/faculty_research/article/4746/type/native/viewcontent/1.4770267
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