Analytical and experimental characterization of sub-half micron MOS devices

Analytical and experimental characterization of sub-half micron MOS devices

We present in this thesis the characterization of deep submicrometer (the device channel length ranges from 0.25um to l.Oum) lightly-doped drain (LDD) pMOSFETs operating in a Bi-MOS structure. The Bi-MOS structure is essentially a device operating with its source-body junction forward biased. Conseq...

وصف كامل

محفوظ في:

التفاصيل البيبلوغرافية
المؤلف الرئيسي:	Chew, Johnny Kok Wai.
مؤلفون آخرون:	Rofail, Samir
التنسيق:	Theses and Dissertations
اللغة:	English
منشور في:	2008
الموضوعات:	DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
الوصول للمادة أونلاين:	http://hdl.handle.net/10356/13187
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!

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