Novel solution for high-temperature dielectric application to encapsulate high-voltage power semiconductor devices

• Main Authors: Chidambaram, Vivek, Jing, T., Yang, Ren Bin, Shakerzadeh, Maziar, Hoong, Lim Kuan
• Other Authors: Temasek Laboratories @ NTU
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering; Conformal Coating; Dielectric Breakdown
• Online Access: https://hdl.handle.net/10356/144950
• Institution: Nanyang Technological University

Traditional semiconductor packaging techniques and materials have been working well for conventional Si devices, which usually operate at temperatures up to 175 °C. As the operating temperature increases, these techniques exhibit failures such as bulk flows, volume shrinkage, brittleness and subsequ...