LTspice implementation of PKU compact model of metal-oxide-based RRAM : part A simulation of DC current-voltage characteristics of RRAM device
Resistive-switching random access memory (RRAM) is a kind of nonvolatile memory (NVM) that is based on resistance changes to store data. The concept is not new, but the interest of IC industry in RRAM has been grown during recent years due to RRAM’s potential advantages of high density, high sp...
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| Format: | Thesis-Master by Coursework |
| Language: | English |
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Nanyang Technological University
2021
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| Online Access: | https://hdl.handle.net/10356/153654 |
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| Institution: | Nanyang Technological University |
| Language: | English |