Design an InAsN/InP quantum well laser diode working at 4 um

There are many applications including research, biomedical surgery, molecular spectroscopy, telecommunications, environmental protection, military and semiconductor industries for semiconductor lasers which is emitting light about 2-5 um known as the MIR range. InAsN has two essential characteris...

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Bibliographic Details
Main Author: Yang, Yifan
Other Authors: Fan Weijun
Format: Thesis-Master by Coursework
Language:English
Published: Nanyang Technological University 2022
Subjects:
Online Access:https://hdl.handle.net/10356/163317
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Institution: Nanyang Technological University
Language: English

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