Studies on high frequency performance of advanced Si MOSFETs

This final year project studied degradation mechanisms contributing to the increased high frequency noise of deep-submicrometer nMOSFETs after different hot-carrier (HC) stresses. An HP4156B semiconductor parameter analyzer was used for dc measurement and HC stress. Three groups of devices were stre...

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Bibliographic Details
Main Author: Sun, Zhiyong.
Other Authors: Wang Hong
Format: Final Year Project
Language:English
Published: 2009
Subjects:
Online Access:http://hdl.handle.net/10356/17951
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Institution: Nanyang Technological University
Language: English

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