Dielectric/metal diffusion barrier in Cu/porous ultra low-k interconnect technology

As Cu damascene process and low dielectric constant material (low-k) are introduced into back-end of line (BEOL) semiconductor manufacturing, a robust barrier system is highly essential for integrated circuit (IC) performance and reliability improvements. In this work, the application of dielectric...

Full description

Saved in:
Bibliographic Details
Main Author: Chen, Zhe
Other Authors: Li Chaoyong
Format: Theses and Dissertations
Published: 2008
Subjects:
Online Access:https://hdl.handle.net/10356/3490
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University

Similar Items