Dielectric/metal diffusion barrier in Cu/porous ultra low-k interconnect technology

• Main Author: Chen, Zhe
• Other Authors: Li Chaoyong
• Format: Theses and Dissertations
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
• Online Access: https://hdl.handle.net/10356/3490
• Institution: Nanyang Technological University

As Cu damascene process and low dielectric constant material (low-k) are introduced into back-end of line (BEOL) semiconductor manufacturing, a robust barrier system is highly essential for integrated circuit (IC) performance and reliability improvements. In this work, the application of dielectric...