Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs)

• Main Authors: Kumar, Annie, Lee, Shuh-Ying, Yadav, Sachin, Tan, Kian Hua, Loke, Wan Khai, Dong, Yuan, Lee, Kwang Hong, Wicaksono, Satrio, Liang, Gengchiau, Yoon, Soon-Fatt, Antoniadis, Dimitri, Yeo, Yee-Chia, Gong, Xiao
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2019
• Subjects: Integrated Optics; Integrated Optoelectronic Circuits; DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/81287; http://hdl.handle.net/10220/47459
• Institution: Nanyang Technological University

Lasers monolithically integrated with high speed MOSFETs on the silicon (Si) substrate could be a key to realize low cost, low power, and high speed opto-electronic integrated circuits (OEICs). In this paper, we report the monolithic integration of InGaAs channel transistors with electrically pumped...