Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocations

• Main Authors: Jia, Bo Wen, Tan, Kian Hua, Loke, Wan Khai, Wicaksono, Satrio, Yoon, Soon Fatt
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2016
• Subjects: Epitaxial Growth; TEM
• Online Access: https://hdl.handle.net/10356/81530; http://hdl.handle.net/10220/39576
• Institution: Nanyang Technological University

We report a fully relaxed low threading dislocation density InSb layer grown on a GaAs substrate using self-assembled periodic interfacial misfit dislocations. The InSb layer was grown at 310°C by molecular beam epitaxy. The AFM measurement exhibited a root mean square (r.m.s.) roughness of 1.1 nm....