Operating TSV in stable accumulation capacitance region by utilizing Al2O3-induced negative fixed charge

• Main Authors: Zhang, L., Li, H. Y., Peng, L., Lo, Guo-Qing, Kwong, Dim Lee, Tan, Chuan Seng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/96076; http://hdl.handle.net/10220/11346
• Institution: Nanyang Technological University

The variation of through-silicon-via (TSV) capacitance caused by nonuniform hot-spot heating can lead to spatial circuit performance variation; this effect is undesirable for 3-D IC design. Hence, stable TSV capacitance is desired to overcome this issue. In this letter, stable TSV capacitance is ach...