On the Ni–Si phase transformation with/without native oxide
This study has been carried out to check the effect of native oxide on the formation of Ni silicides. Ni films of various thickness were sputter deposited on Si(100) wafer without oxide, with native oxide and with oxide grown by rapid thermal oxidation, and subjected to rapid thermal annealing in ni...
Saved in:
Main Authors: | Mangelinck, D., Dai, J. Y., Ho, C. S., See, A., Lee, Pooi See, Pey, Kin Leong, Ding, Jun |
---|---|
Other Authors: | School of Materials Science & Engineering |
Format: | Article |
Language: | English |
Published: |
2013
|
Online Access: | https://hdl.handle.net/10356/97283 http://hdl.handle.net/10220/10540 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
Layer inversion of Ni(Pt)Si on mixed phase Si films
by: Osipowicz, T., et al.
Published: (2012) -
Phase and layer stability of Ni- and Ni(Pt)-silicides on narrow poly-Si lines
by: Mangelinck, D., et al.
Published: (2012) -
Ni(Pt) alloy silicidation on (100) Si and poly-silicon lines
by: Pey, Kin Leong, et al.
Published: (2013) -
In situ XRD analysis of Ni(Pt)/Si(100) reactions in low temperature regime ≤400°C
by: Mangelinck, D., et al.
Published: (2013) -
Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack
by: Mangelinck, D., et al.
Published: (2013)