Impacts of light illumination on monocrystalline silicon surfaces passivated by atomic layer deposited Al2O3 capped with plasma-enhanced chemical vapor deposited SiNX
10.7567/JJAP.56.08MB01
Saved in:
Main Authors: | Lin, Fen, Toh, Mei Gi, Thway, Maung, Li, Xinhang, Nandakumar, Naomi, Gay, Xavier, Dielissen, Bas, Raj, Samuel, Aberle, Armin G |
---|---|
Other Authors: | DEPT OF ELECTRICAL & COMPUTER ENGG |
Format: | Article |
Language: | English |
Published: |
IOP PUBLISHING LTD
2019
|
Subjects: | |
Online Access: | https://scholarbank.nus.edu.sg/handle/10635/155046 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Language: | English |
Similar Items
-
Progress in surface passivation of heavily doped n-type and p-type silicon by plasma-deposited AlO x/SiNx dielectric stacks
by: Duttagupta, S., et al.
Published: (2014) -
Numerical modelling of silicon p+ emitters passivated by a PECVD AlOx/SiNx stack
by: Ma, F.-J., et al.
Published: (2014) -
Numerical analysis of p+ emitters passivated by a PECVD AlO x/SiNx stack
by: Ma, F.-J., et al.
Published: (2014) -
Self-organized ZnO nanodot arrays : effective control using SiNx interlayers and low-temperature plasmas
by: Huang, S. Y., et al.
Published: (2013) -
A new fabrication method of low stress PECVD SiNx layers for biomedical applications
by: Wei, J., et al.
Published: (2014)