ADVANCED SOURCE AND DRAIN CONTACT ENGINEERING FOR FIELD-EFFECT TRANSISTORS
Ph.D
Saved in:
Main Author: | WU YING |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Theses and Dissertations |
Language: | English |
Published: |
2019
|
Subjects: | |
Online Access: | https://scholarbank.nus.edu.sg/handle/10635/163181 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Language: | English |
Similar Items
-
ADVANCED SOURCE AND DRAIN CONTACT ENGINEERING FOR GERMANIUM-TIN AND SILICON-GERMANIUM TRANSISTORS
by: XU HAIWEN
Published: (2023) -
Dopant segregation and nickel stanogermanide contact formation on p +Ge 0.947Sn 0.053 source/drain
by: Han, G., et al.
Published: (2014) -
Soft-Etching Copper and Silver Electrodes for Significant Device Performance Improvement toward Facile, Cost-Effective, Bottom-Contacted, Organic Field-Effect Transistors
by: Wang, Zongrui, et al.
Published: (2017) -
The DFT Study of Electronic and Optical Properties of the Surface Functional SiGe, GeSn and GeSn Nanostructures
by: Roohan Thirayatorn, et al.
Published: (2020) -
Review of Si-based GeSn CVD growth and optoelectronic applications
by: Miao, Yuanhao, et al.
Published: (2022)