High mobility III-V compound semiconductors for advanced transistor applications
Ph.D
Saved in:
Main Author: | CHIN HOCK CHUN |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Theses and Dissertations |
Language: | English |
Published: |
2011
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/27482 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Language: | English |
Similar Items
-
Contact and source/drain engineering for advanced III-V field-effect transistors
by: KONG YU JIN EUGENE
Published: (2014) -
Extending Si CMOS: InGaAs and GeSn High Mobility Channel Transistors for Future High Speed and Low Power Applications
by: GONG XIAO
Published: (2013) -
In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs
by: Chin, H.-C., et al.
Published: (2014) -
Advanced Transistors for Supply Voltage Reduction: Tunneling Field-Effect Transistors and High-Mobility MOSFETS
by: GUO PENGFEI
Published: (2013) -
InGaAs N-MOSFETS with CMOS Compatible Source/Drain Technology and the Integration on Si Platform
by: IVANA
Published: (2013)