Analysis of AlGaAs/GaAs/InGaAs n-type step multiple quantum wells for the optimization of normal incident absorption
10.1088/0268-1242/17/9/322
Saved in:
Main Authors: | Cheah, C.W., Karunasiri, G., Tan, L.S. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/50864 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Responsivities of n-type GaAs/InGaAs/AlGaAs step multiple-quantum-well infrared detectors
by: Cheah, C.W., et al.
Published: (2014) -
Growth of GaAs/AlGaAs quantum well lasers and GaAs/InGaAs vertical cavity surface emitting lasers by MBE
by: Li, Chaoyong.
Published: (2009) -
Study of quantum phenomena in intermixed GaAs/AlGaAs and InGaAs/InGaAsP quantum well structures
by: Au Yeung, Tin Cheung.
Published: (2008) -
GaAs/AlAs/AlGaAs quantum well infrared photodetector
by: Fan, Weijun
Published: (2008) -
Normal incident intersubband infrared detector using n-type InGaAs/GaAs quantum wells
by: Karunasiri, Gamani, et al.
Published: (2014)