InGaN self-assembled quantum dots grown by metalorganic chemical-vapor deposition with indium as the antisurfactant

InGaN self-assembled quantum dots grown by metalorganic chemical-vapor deposition with indium as the antisurfactant

10.1063/1.1433163

Saved in:

書目詳細資料
Main Authors:	Zhang, J., Hao, M., Li, P., Chua, S.J.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Article
出版:	2014
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/56337
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

相似書籍

Phase separation in Zn-doped InGaN grown by metalorganic chemical vapor deposition
由: Feng, Z.C., et al.
出版: (2014)

Luminescence, morphology and X-ray diffraction features of InGaN materials grown on sapphire by metalorganic chemical vapor deposition
由: Li, P., et al.
出版: (2014)

Growth of InN and its effect on InGaN epilayer by metalorganic chemical vapor deposition
由: Hartono, H., et al.
出版: (2014)

Photoluminescence and photoelectron spectroscopic analysis of InGaAsN grown by metalorganic chemical vapor deposition
由: Chang, W., et al.
出版: (2014)

Structural and optical properties of GaN materials grown on Si by metalorganic chemical vapor deposition
由: Chen, J.L., et al.
出版: (2014)

Crystalline phase separation of InGaN layer materials prepared by metalorganic chemical vapor deposition
由: Feng, Z.C., et al.
出版: (2014)

Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)
由: CHUA, SOO JIN, et al.
出版: (2012)

Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)
由: CHUA, SOO JIN, et al.
出版: (2012)

Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition
由: Feng, Z.C., et al.
出版: (2014)

Metalorganic chemical vapor deposition and spontaneous emission of self-assembled InAs quantum dots in open space and in a planar microcavity
由: Zhang, X.H., et al.
出版: (2014)

The formation of In-rich regions at the perphery of the inverted hexahonal pits of InGaN thin-films grown by metalorganic vapor phase epitaxy
由: Li, P., et al.
出版: (2014)

Formation of In-rich regions at the perphery of the inverted hexagonal pits of InGaN thin-films grown by metalorganic vapor phase epitaxy
由: Li, P., et al.
出版: (2014)

Structural and photoluminescence study of thin GaN film grown on silicon substrate by metalorganic chemical vapor deposition
由: Zhang, J.X., et al.
出版: (2014)

Determination of the direction of piezoelectric field in InGaN/GaN multiple quantum-well structures grown by metal-organic chemical vapor deposition
由: Liu, W., et al.
出版: (2014)

Impact of V/III flux ratio and Si-doping concentration on grown by metalorganic chemical-vapor deposition on sapphire substrate
由: Tan, L.T., et al.
出版: (2014)

Generation of amber III-nitride based light emitting diodes by indium rich InGaN quantum dots with InGaN wetting layer and AlN encapsulation layer
由: Soh, C.B., et al.
出版: (2014)

Growth of indium gallium nitride (InGaN) on porous gallium nitride (GaN) template by metal-organic chemical vapor deposition (MOCVD)
由: CHUA, SOO JIN, et al.
出版: (2012)

Enhanced blue-light emission from InGaN/GaN quantum wells grown over multilayered buffer on silicon substrate by metal organic chemical vapor deposition
由: Zhang, X., et al.
出版: (2014)

Quantum dots excited InGaN/GaN phosphor-free white LEDs
由: Chua, S.J., et al.
出版: (2014)

Saturated dot density of InAs/GaAs self-assembled quantum dots grown at high growth rate
由: Chia, C.K., et al.
出版: (2014)

Surface chemical states of heteroepitaxial nitride films on sapphire by metalorganic chemical vapor deposition
由: Li, K., et al.
出版: (2014)

InGaN multiple quantum wells grown on ELO GaN templates and the optical properties characterization
由: Zhou, H., et al.
出版: (2014)

Mid-infrared emissive InAsSb quantum dots grown by metal–organic chemical vapor deposition
由: Tang, Xiaohong, et al.
出版: (2016)

Investigation of V-defects formation in InGaN/GaN multiple quantum well grown on sapphire
由: Yong, A.M., et al.
出版: (2014)

Comparision of structural property of cubic GaN films grown by metalorganic vapor phase epitaxy on (311) and on (001) GaAs substrates / Nuttapong Discharoen
由: Nuttapong Discharoen
出版: (2013)

Pd-Ni thin films grown on porous Al2O3 substrates by metalorganic chemical vapor deposition for hydrogen sensing
由: Huang, L., et al.
出版: (2014)

Structural analysis of metalorganic chemical vapor deposited AIN nucleation layers on Si (1 1 1)
由: Zang, K.Y., et al.
出版: (2014)

Characterization of graded InGaN/GaN epilayers grown on sapphire
由: Song, T.L., et al.
出版: (2014)

Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding
由: Abdul Kadir, et al.
出版: (2019)

Characterization of AlInGaN quaternary epilayers grown by metal organic chemical vapor deposition
由: Liu, W., et al.
出版: (2014)

Incorporation of self assembled In-rich InGaN nanostructure to achieve redshift in InGaN/GaN heterostructures
由: Soh, C.B., et al.
出版: (2014)

Structural and optical properties of InGaN/GaN multiple quantum wells grown on nano-air-bridged GaN template
由: Zang, K.Y., et al.
出版: (2014)

Strain relaxation in graded InGaN/GaN epilayers grown on sapphire
由: Song, T.L., et al.
出版: (2014)

One-dimensional aligned InAs/InP quantum dots chain growth by metalorganic vapor phase epitaxy for 1.55 μm application
由: Teng, J.H., et al.
出版: (2014)

Study of nitrogen incorporation into (In, Ga) as grown by metal organic chemical vapor deposition
由: Sentosa, Deny
出版: (2011)

Homogeneity improvement of InAs/GaAs self-assembled quantum dots grown by molecular beam epitaxy
由: Suwit Kiravittaya
出版: (2006)

Self-assembly of polar phthalocyanine molecules on graphene grown by chemical vapor deposition
由: Ogawa, Y., et al.
出版: (2014)

Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots
由: Xu, S. J., et al.
出版: (2011)

Photoreflectance study of Si-doped GaN grown by metal-organic chemical vapor deposition
由: Zhang, X., et al.
出版: (2014)

Parameters study on the growth of GaAs nanowires on indium tin oxide by metal-organic chemical vapor deposition
由: Wu, Dan, et al.
出版: (2017)