Bipolar current stressing and electrical recovery of quasi-breakdown in thin gate oxides
Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Saved in:
Main Authors: | Loh, W.Y., Cho, B.J., Li, M.F. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/69510 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Evolution of quasi-breakdown in thin gate oxides
by: Loh, W.Y., et al.
Published: (2014) -
Annealing behavior of gate oxide leakage current after quasi-breakdown
by: Xu, Z., et al.
Published: (2014) -
Investigation of quasi-breakdown mechanism in ultra-thin gate oxides
by: Guan, H., et al.
Published: (2014) -
A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's
by: Guan, H., et al.
Published: (2014) -
A study of quasi-breakdown mechanism in ultrathin gate oxide under various types of stress
by: Guan, H., et al.
Published: (2014)