Electromigration in aluminum/silicon/copper metallization due to the presence of a thin oxide layer
Journal of Electronic Materials
Saved in:
Main Authors: | Koh, K.A., Chua, S.J. |
---|---|
Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/80391 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Effects of Cu interdiffusion on the electromigration failure of FM/Cu/FM tri-layers for spin valve read sensors
by: Jiang, J., et al.
Published: (2014) -
Magnetic instability of giant magnetoresistance spin-valves due to electromigration-induced inter-diffusion
by: Jiang, J., et al.
Published: (2014) -
Effects of Cu:Al ratios and SiO2 substrates on PE-MOCVD copper aluminium oxide semiconductor thin films
by: CAI JIANLING
Published: (2010) -
Effect of current distribution on the reliability of multi-terminal Cu dual-damascene interconnect trees
by: Gan, C.L., et al.
Published: (2014) -
The quasi-static response and fracture behavior of a thermomechanically processed aluminum alloy metal-matrix composite
by: Ling, S., et al.
Published: (2014)