A self-aligned Ni-InGaAs contact technology for InGaAs channel n-MOSFETs

10.1149/2.060205jes

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Bibliographic Details
Main Authors: Zhang, X., Ivana, Guo, H.X., Gong, X., Zhou, Q., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81907
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Institution: National University of Singapore

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