Crystal structure and epitaxial relationship of Ni4InGaAs 2 films formed on InGaAs by annealing
10.1116/1.4769266
Saved in:
Main Authors: | Ivana, Foo, Y.L., Zhang, X., Zhou, Q., Pan, J., Kong, E., Owen, M.H.S., Yeo, Y.-C. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82107 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
A self-aligned Ni-InGaAs contact technology for InGaAs channel n-MOSFETs
by: Zhang, X., et al.
Published: (2014) -
Pd-InGaAs as a new self-aligned contact material on InGaAs
by: Kong, E.Y.-J., et al.
Published: (2014) -
N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates
by: Ivana, et al.
Published: (2014) -
Selective wet etching process for Ni-InGaAs contact formation in InGaAs N-MOSFETs with self-aligned source and drain
by: Subramanian, S., et al.
Published: (2014) -
Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in InGaAs metal-oxide-semiconductor field-effect transistors
by: Kong, E.Y.-J., et al.
Published: (2014)