Deep level centers in InGaN/GaN heterostructure grown on sapphire and free-standing GaN

• Main Authors: Soh, C.B., Chua, S.J., Chen, P., Chi, D.Z., Liu, W., Hartono, H.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: AFM; DLTS; InGaN; X-ray diffraction
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82116
• Institution: National University of Singapore

10.1016/j.tsf.2006.07.174