Leakage suppression of gated diodes fabricated under low-temperature annealing with substitutional carbon Si1-yCy incorporation

Leakage suppression of gated diodes fabricated under low-temperature annealing with substitutional carbon Si1-yCy incorporation

10.1109/LED.2005.845501

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書目詳細資料
Main Authors:	Tan, C.F., Chor, E.F., Lee, H., Liu, J., Quek, E., Chan, L.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Article
出版:	2014
主題:	Carbon Junction leakage Solid-phase epitaxy re-growth (SPER)
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/82616
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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