Characterization of ultrashallow dopant profiles using spreading resistance profiling
10.1116/1.1426370
Saved in:
Main Authors: | Tan, L.S., Tan, L.C.P., Leong, M.S., Mazur, R.G., Ye, C.W. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/83545 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Spreading resistance profiling of ultrashallow junction NPN BJT, with carrier redistribution effect
by: Tan, L.C.P., et al.
Published: (2014) -
Spreading resistance profiling of ultrashallow junction NPN BJT, with carrier redistribution effect
by: Tan, L.C.P., et al.
Published: (2014) -
Extraction of semiconductor dopant profiles from spreading resistance data: An inverse problem
by: Choo, S.C., et al.
Published: (2014) -
SIMS backside depth profiling of ultrashallow implants using silicon-on-insulator substrates
by: Yeo, K.L., et al.
Published: (2014) -
Dielectric characterization and dopant profile extraction using scanning capacitance microscopy
by: WONG KIN MUN
Published: (2010)